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| SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 5.0 ohm : 2.0 A : 16 nc : 50 W SW2N60 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It's typical application is TV and monitor. D G TO-252 TO-220 S Absolute Maximum Ratings Symbol Parameter TO-220 VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source Voltage Continuous Drain Current (@Tc=25) Continuous Drain Current (@Tc=100) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25) Derating Factor above 25 Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) 50 0.4 -55~+150 300 5.0 5.0 42 0.34 (Note 1) 2.0 1.67 8.0 30 110 4.2 600 1.8 1.47 7.2 Value TO-251(2) Units V A A A V mJ mJ V/ns W W/ Thermal Characteristics Value Symbol RJC RCS RJA Units Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Max TYP. Max TO-220 2.4 0.5 62.5 TO-251(2) 2.9 / W / W / W 1/6 REV0.2 04.11.1 SAMWIN Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ Tj IDSS Drain- Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage Current IGSS Gate-Source Leakage Reverse VGS=0V,ID=250uA ID=250uA,referenced to 25 VDS=600V, VGS=0V VDS=480V, Tc=125 VGS=30V,VDS=0V VGS=-30V, VDS=0V 600 (Tc=25 unless otherwise noted) SW2N60 Value Test Conditions Min Typ Max Units Parameter 0.17 - V V/ - - 1 100 -100 uA nA nA On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance VDS=VGS,ID=250uA VGS=10V,ID=0.9A 2.0 4.0 5 V ohm Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V,VDS=25V, f=1MHz 520 50 11 pF Dynamic Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time (Note4,5) Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) VDS=480V,VGS=10V, ID=1.8A (Note4,5) 3 5 VDD=300V,ID=1.8A RG=50ohm 60 94 ns 140 74 20 nc Source-Drain Diode Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current Pulsed Source Current Test Conditions Integral Reverse p-n Junction Diode in the MOSFET TO-220 2.0 8.0 MIN TYP 250 1.5 TO-251(2) 1.8 7.2 MAX 1.5 - Unit. A VSD trr Qrr NOTES Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS=1.8A,VGS=0V IS=1.8A,VGS=0V, dIF/dt=100A/us - V ns uc 1. Repeativity rating: pulse width limited by junction temperature 2. L=62.2mH,IAS=1.8A,VDD=50V,RG=0ohm, Starting TJ=25 3. ISD1.8A,di/dt100A/us,VDDBVDSS, Starting TJ=25 4. Pulse Test: Pulse Width300us,Duty Cycle2% 5. Essentially independent of operating temperature. 6. The Max data with "" will be reduce soon. 2/6 REV0.2 04.11.1 SAMWIN VGS top: 15V 10V 9V 8V 7V 6V 5.5V 5V 4.5V bottom:4.0V SW2N60 ID,Drain Current [A] 10 0 4.0V ID,Drain Current [A] 10 0 150 C o 25 C Note: 1.VDS=50V 2.250us pulse test. o 10 -1 10 -1 10 0 Vds,Drain-to-Source voltage [V] 10 1 2 4 6 8 10 VGS, Gate-Source Voltage [V] Fig 1. On-State Characteristics Fig 2. Transfer Characteristics 8 Drain-Source On-Resistance[ohm] 7 IDR,Reverse Drain Current[A] VGS=20V 6 10 1 VGS=10V RDS(ON) 5 150 10 0 25 4 3 Note: 1.vGS=0v 2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 -1 2.250us test 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current[A] VSD,Source-Drain Voltage[V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage 500 Ciss = Cgs+Cgd(Cds=shorted) Coss= Cds+Cgd Fig 4. On State Current vs. Allowable Case Temperature 12 VGS,Gate-to-Source Voltage [V] 400 Crss = Cgd 10 Ciss Capacitance [pF] 300 VDS=480V 8 VDS=300V VDS=120V Coss Note: 6 200 Crss 100 1.VGS=0V 2.f=1MHz. 4 2 Note:ID=1.8A 0 5 10 15 20 0 -1 10 0 10 0 10 1 VDC,Drain-Source Voltage [V] QG,Total Gate Charge [nC] Fig 5. Capacitance Characteristics (Non-Repetitive) 3/6 Fig 6. Gate Charge Characteristics REV0.2 04.11.1 SAMWIN 1.2 4.0 3.5 SW2N60 Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 Note: Drain-Source Breakdown Voltage 1.1 BVDSS[Normalized] 1.0 0.9 Note: RDs(on)(Normalized) 1.VGS=0V 2.ID=250uA 0.5 0.0 -100 1.VGS=10V 2.ID=0.9A -50 0 50 o 0.8 -100 -50 0 50 100 o 150 200 100 150 TJ,Junction Temperatur [ C] TJ,Junction Temperature[ C] Fig 7. Breakdown Voltage Variation vs. Junction Temperature 2 Fig 8. On-Resistance Variation vs. Junction Temperature 10 1 Operation In This Area Limted By RDS(ON) 100us ID, Drain Current[A] ID, Drain Current[A] 1ms 10 0 10ms 1 10 -1 Note: 1.Tc=25C 2.Tj=150C 3.Single Pulse 0 10 -2 10 10 1 10 2 10 3 0 25 50 75 100 o 125 150 VD,Drain-Source Voltage[V] Tc,Case Temperature [ C] Fig9. Maximum Safe Operating Fig 10. Maximum Drain Current Vs. Case Temperature Z (t),Thermal Response 10 0 0 .5 0 .2 0 .1 0 .0 5 10 -1 JC 0 .0 2 0 .0 1 S IN G L E P U L S E N o te : 1 .Z JC (t)= 2 .9 C /w M a x o 2 .D u ty F a c to r ,D = t1 /t2 3 .T j- T c = P D M * Z J C ( t ) 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1 ,S q u a r e W a v e P u ls e D u r a tio n ( s e c ) Fig 11. Transient Thermal Response Curve 4/6 REV0.2 04.11.1 SAMWIN Same Type as DUT 300nF SW2N60 VGS 10V Qg Qgs Qgd 50K 200nF VDS VGS DUT 1mA Charge Fig 12. Gate Charge test Circuit & Waveforms RL VDS VDD (0.5 rated VDS) VDS 90% 10V Pulse Generator RG DUT Vin 10% tf td(off) td(on) tr ton toff Fig 13. Switching test Circuit & Waveforms L VDS VDD BVDSS RG DUT 10V IAS VDD 1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD ID(t) VDS(t) tp Time Fig 14. Unclamped Inductive Switching test Circuit & Waveforms 5/6 REV0.2 04.11.1 SAMWIN DUT SW2N60 + VDS __ L Driver RG Same Type as DUT VGS VDD dv/dt controlled by RG Is controlled by pulse period VGS (Driver) Gate Pulse Width D = --------------------------Gate Pulse Period 10V IFM,Body Diode Forward Current di/dt IS (DUT) IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms 6/6 REV0.2 04.11.1 |
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